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Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

Identifieur interne : 000289 ( Main/Repository ); précédent : 000288; suivant : 000290

Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

Auteurs : RBID : Pascal:13-0285528

Descripteurs français

Pascal (Inist)
- Epitaxie phase liquide, Méthode numérique, Distribution concentration, Profil profondeur, Modèle 1 dimension, Taux croissance, Vitesse refroidissement, Surfusion, Epaisseur, Dépendance temps, Gallium Antimoniobismuthure, Indium Antimoniobismuthure.

English descriptors

KwdEn :
- Concentration distribution, Cooling rate, Depth profiles, Gallium Antimonides bismuthides, Growth rate, Indium Antimonides bismuthides, LPE, Numerical method, One dimensional model, Supercooling, Thickness, Time dependence.

Abstract

We have used numerical methods to investigate the concentration profile of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi. The one-dimensional diffusive model has been used to study the transport of bismuth atoms at equally spaced layers in the proximity of the epitaxial interface growing under normal conditions of liquid phase epitaxy. The parameters such as growth temperature, cooling rate and melt supercooling have been varied to find out the optimum conditions of growth. The model has also been used to estimate the thickness of the grown layers as a function of growth time.

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Le document en format XML

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<author><name sortKey="Samajdar, D P" uniqKey="Samajdar D">D. P. Samajdar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Science, University of Calcutta, 92 A. P. C. Road</s1>
<s2>Kolkata-700009</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Kolkata-700009</wicri:noRegion>
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<author><name sortKey="Dhar, S" uniqKey="Dhar S">S. Dhar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Science, University of Calcutta, 92 A. P. C. Road</s1>
<s2>Kolkata-700009</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Inde</country>
<wicri:noRegion>Kolkata-700009</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0285528</idno>
<date when="2013">2013</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Concentration distribution</term>
<term>Cooling rate</term>
<term>Depth profiles</term>
<term>Gallium Antimonides bismuthides</term>
<term>Growth rate</term>
<term>Indium Antimonides bismuthides</term>
<term>LPE</term>
<term>Numerical method</term>
<term>One dimensional model</term>
<term>Supercooling</term>
<term>Thickness</term>
<term>Time dependence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie phase liquide</term>
<term>Méthode numérique</term>
<term>Distribution concentration</term>
<term>Profil profondeur</term>
<term>Modèle 1 dimension</term>
<term>Taux croissance</term>
<term>Vitesse refroidissement</term>
<term>Surfusion</term>
<term>Epaisseur</term>
<term>Dépendance temps</term>
<term>Gallium Antimoniobismuthure</term>
<term>Indium Antimoniobismuthure</term>
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<front><div type="abstract" xml:lang="en">We have used numerical methods to investigate the concentration profile of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi. The one-dimensional diffusive model has been used to study the transport of bismuth atoms at equally spaced layers in the proximity of the epitaxial interface growing under normal conditions of liquid phase epitaxy. The parameters such as growth temperature, cooling rate and melt supercooling have been varied to find out the optimum conditions of growth. The model has also been used to estimate the thickness of the grown layers as a function of growth time.</div>
</front>
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<fA06><s2>6</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi</s1>
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<fA11 i1="01" i2="1"><s1>SAMAJDAR (D. P.)</s1>
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<fA11 i1="02" i2="1"><s1>DHAR (S.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electronic Science, University of Calcutta, 92 A. P. C. Road</s1>
<s2>Kolkata-700009</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>23 ref.</s0>
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<fA47 i1="01" i2="1"><s0>13-0285528</s0>
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<fC01 i1="01" l="ENG"><s0>We have used numerical methods to investigate the concentration profile of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi. The one-dimensional diffusive model has been used to study the transport of bismuth atoms at equally spaced layers in the proximity of the epitaxial interface growing under normal conditions of liquid phase epitaxy. The parameters such as growth temperature, cooling rate and melt supercooling have been varied to find out the optimum conditions of growth. The model has also been used to estimate the thickness of the grown layers as a function of growth time.</s0>
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<fC02 i1="01" i2="3"><s0>001B80A15L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>LPE</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Méthode numérique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Numerical method</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Método numérico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Distribution concentration</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Concentration distribution</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Distribución concentración</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Profil profondeur</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Depth profiles</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Modèle 1 dimension</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>One dimensional model</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Modelo 1 dimensión</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Taux croissance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Growth rate</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Vitesse refroidissement</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Cooling rate</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Surfusion</s0>
<s5>10</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Supercooling</s0>
<s5>10</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Epaisseur</s0>
<s5>11</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Thickness</s0>
<s5>11</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Dépendance temps</s0>
<s5>12</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Time dependence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Gallium Antimoniobismuthure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Gallium Antimonides bismuthides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Antimoniuro bismuturo</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Indium Antimoniobismuthure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium Antimonides bismuthides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Antimoniuro bismuturo</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>14</s5>
</fC03>
<fN21><s1>273</s1>
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Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri